By Ivan A. Parinov
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P-type SiC MOS high-frequency voltage-capacitance characteristic for the three types of capacitors (WN2OG under wet N2O oxidation, DN2OG under dry N2O oxidation and DWN2OG under both dry and wet N2O oxidation) . 44 V. V. Polyakov In most cases SiH4, Si2H6 or SiCl2H2 are used as silicon forming component. It is wellknown, however [87, 91], that during thermal chemical deposition, some of the silicon organic compounds (for example, Tetraethoxysilane (TEOS - Si(OC2H5)4) can provide SiO2 layers, demonstrating electrical and physical properties with high conformability and uniformity.
15, while for silicon it is observed under pressure of р = 1 (humidity 100 %). Therefore, it is possible to make a thick oxide controlling Н2О and О2 flow Development and Study of Silicon Dioxide Nanostructured Films … 37 rates on the Si-face. e. the rate of the flow, comprising water vapor and oxygen). For samples (1-4) from Table 2, there is an increase in oxide thickness with increasing the gas flow rate. However, the gas flow rate of sample 5 is lower than the one of samples 1-4, while the oxide is thicker.
At the same time, it was shown in  that interfacial state density is higher for p-type MOS-structures than for n-type MOS-structures. A more detailed investigation of the (0001) Si-face revealed the absence of carbon clusters as well as carbon contained in co-products, the latter ones are detected through studies of the photoemission of ex-situ and in-situ grown samples SiO2/4H-SiC . According to , the main reason of high density of the defects at the interface SiO2/SiC is the presence of sub-oxide Si2O, apart from fully formed oxide SiO2.